Russian Federation
The work is devoted to the study of the influence of the structural features of the crystal on the resistance of DMOS transistors under the influence of ionizing radiation. A comparison of the results of instrumentation and technological modeling of commercially available p-channel DMOS transistors designed for the maximum allowable drain-source voltage of 60V and 100V is carried out. Modeling was carried out in the TCAD environment, all the basic physical principles of the structure under study were taken into account with the help of appropriate mathematical models. The obtained values of the model's electrical parameters showed full compliance with the normative values. The critical points of the crystal design that affect the performance of transistors in the presence of ionizing radiation from outer space are determined. The influence of the electric field strength in the crystal body on the resistance to ionizing radiation is estimated. It is shown that the actual values of the electric field strength in the region of the p-n junction do not exceed the values of the critical strength, having a margin of more than 1.22 times.
Field effect transistors, MOSFET, DMOS, MOS, DMOS, critical electric field strength, resistance, ionizing radiation, CAD TCAD.
1. Patent № 201024089/28 Rossiyskaya Federaciya, Poluprovodnikovyy pribor : № 2437183 : zayavl. 11.06.2010 ; opubl. 20.12.2011 / B.M. Bubukin, A.N. Kastryulev, B.G. Ryazancev ; zayavitel' i patentoobladatel' OAO «VZPP-sborka». – 7 s.
2. Shockley, W. Statistics of the Recombination of Holes and Electrons / W. Shockley, W.T. Read // Physical Review. – 1952. – Vol. 87. – Pp. 835-842. – DOI: 10.1103/PHYSREV.87.835.
3. Hall, R.N. Electron Hole Recombination in Germanium / R.N. Hall // Physical Review. – 1952. – Vol. 87. – C. 387. – DOI: 10.1103/PHYSREV.87.387.
4. Roulston, D.J. Modeling and Measurement of Minority-Carrier Lifetime versus Doping in Diffused Layers of n ±p Silicon Diodes / D.J. Roulston, N.D. Arora, S.G. Chamberlain // IEEE Transactions on Electron Devices. – 1982. –Vol. 29. – Pp. 284-291. – DOI: 10.1109/T-ED.1982.20697.
5. Law, M.E. Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility / M.E. Law, E. Solley, D. Burk // IEEE Electron Device Letters. – 1991. – Vol. 12, № 8. – Pp. 401-403. – DOI: 10.1109/55.119145.
6. Fossum, J.G. A Physical Model for the Dependence of Carrier Lifetime on Doping Density in Nondegenerate Silicon / J.G. Fossum, D.S. Lee // Solid State Electronics. – 1982. – Vol. 25 (8). – Pp. 741-747. - DOI: 10.1016/0038-1101(82)90203-9.
7. Barnes, J.J. Finite-element Simulation of GaAs MESFET’s with Lateral Doping Profiles and Sub-micron Gates / J.J. Barnes, R.J. Lomax, G.I. Haddad // IEEE Transactions on Electron Devices. – 1976. - Vol. 23 (9). – Pp. 1042-1048. – DOI: 10.1109/T-ED.1976.18533.
8. Yu, Z. SEDAN III-A Generalized Electronic Material Device Analysis Program / Z. Yu, R.W. Dutton // Stanford Electronics Laboratory Technical Report. - Stanford University, 1985. – 105 p.
9. Joyce, W.B. Analytic Approximation for the Fermi Energy of an ideal Fermi Gas / W.B. Joyce, R.W. Dixon // Applied Physics Letters. – 1977. – Vol. 31 (5). – Pp. 354-356. – DOI: 10.1063/1.89697.
10. Baliga, B.J. Advanced high voltage power device concepts / B.J. Baliga. – Springer Science, 2011. – 568 p. – DOI: 10.1007/978-1-4614-0269-5.
11. Nikishin, V.I. Proektirovanie i tehnologiya proizvodstva moschnyh SVCh tranzistorov / V.I. Nikishin. – M. : «Radio i svyaz'», 1989. – 144 s.
12. Atlas User’s Manual, Device simulation software / Silvaco, Inc. - Santa Clara, 2018. - 1691 r.
13. Silvaco TCAD tools: Victory Process User’s Manual, Process simulation software. – Santa Clara, 2018. - 1186 r.
14. TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes / I. Evsikov, G. Demin, N. Djuzhev, M. Makhiboroda // Proceedings of spie.- 2019. - № 3. – P. 104. - DOI: 104. 10.1117/12.2522483.
15. Zi, S. Fizika poluprovodnikovyh priborov / S. Zi. - M.: «Mir», 1984. - 455 s.
