UDC 53

Temperature stepped raising during formation of solid epitaxial films of superconductors YBa2Cu3O7-x to increase current carrying capacity of VTSP second generation bands

Published в Science intensive technologies in mechanical engineering · Volume 2017, Issue 11, 2017 · Pages 3–9 · Rubrics: SCIENCE INTENSIVE MATERIALS PROCESSING AND NANOTECHNOLOGIES (archived)
DOI 10.12737/article_59f074a5b16728.41367086
Received: 24.10.2017 Accepted: 25.10.2017 Published: 25.10.2017 Language of publication: RUS
Authors
1 “Kurchatov Institute” National Research Center (Research Engineer)
Moskva, Moscow, Russian Federation
2 “Kurchatov Institute” National Research Center (Research Engineer)
Moskva, Moscow, Russian Federation
3 “Kurchatov Institute” National Research Center (Research Engineer)
Moskva, Moscow, Russian Federation
4 “Kurchatov Institute” National Research Center (laboratoriya tverdotel'nyh struktur, nachal'nik)
Moskva, Moscow, Russian Federation
5 “Kurchatov Institute” National Research Center (otdel prikladnyh nanoelektronnyh struktur, nachal'nik)
Moskva, Moscow, Russian Federation
A method for the high density conservation of critical current in VTSP second generation films is offered which is based on the temperature stepped raising during the formation of solid epitaxial VTSP films. This method allows inhibiting a growth of a-directed crystals at the formation of a superconducting layer up to 2 mkm thick.
high temperature superconductivity epitaxial films pulse laser deposition VTSP second generation film.
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References

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