Russian Federation
Without the creation of Russian technology for designing SoC, it is impossible to provide a modern level of VLSI development, both for defense and civil applications. This is in line with global development trends. Nevertheless, it is necessary to highlight only those essential processes that are most consistent with Russian realities and can help in solving specific problems of the defense industry and the economy as a whole at the lowest cost and in the shortest possible time. The most important element of the implementation of SoC technology is the organization of a single sign-on to locate the production of microcircuits based on this technology. This will allow to drastically reduce costs, to certify the system of complex functional blocks, to increase the reliability and sustainability of developments. Even in organizational terms, this will allow an organized firm (conditionally - Silicon Gate) to be included as a certified chip manufacturer in any contracts with MO. The article discusses the structuring of programs for the development of domestic technology of SoC systems on a chip, the coordination of the SoC area of developments and complex functional blocks, as well as their information support.
Chip, operability, test interval, multiple failures, parameters, simulation, cell sensitivity, efficiency, test methods.
1. Semkin, N.D. Calculating the current in the measurement circuit of a high-velocity microparticle detector / N.D. Semkin, A.M. Telegin // Measurement techniques. – 2017. – T. 59, № 12. – S. 1304-1309. – DOI: 10.1007/s11018-017-1133-3.
2. Belyaeva, T.P. Upravlenie predpriyatiyami mikroelektroniki: sostoyanie i zadachi razvitiya / T.P. Belyaeva, D.I. Stanchev // Informacionnye tehnologii modelirovaniya i upravleniya. - 2011. - № 3 (68). - S. 333-340.
3. Sovremennye usloviya ekspluatacii mikroshem kosmicheskogo naznacheniya / V.K. Zol'nikov, V.P. Kryukov, A.Yu. Kulay [i dr.] // Informacionnye tehnologii v upravlenii i modelirovanii mehatronnyh sistem. materialy 1-y nauchno-prakticheskoy mezhdunarodnoy konferencii. – Tambov, 2017. – S. 119-126.
4. Algoritmicheskaya osnova modelirovaniya i obespecheniya zaschity tipovyh KMOP elementov v processe proektirovaniya / V.K Zol'nikov, V.A. Smerek, V.I. Anciferova, S.A. Evdokimova // Modelirovanie sistem i processov. – 2013. – № 3. – S. 14-16. – DOI: 10.12737/2382.
5. Razrabotka proektnoy sredy i ocenka tehnologichnosti proizvodstva mikroshemy s uchetom stoykosti k special'nym faktoram na primere SBIS 1867VC6F / V.A. Sklyar, V.A. Smerek, K.V. Zol'nikov [i dr.] // Modelirovanie sistem i processov. - 2020. - T. 13, № 1. - S. 77-82. – DOI: 10.12737/2219-0767-2020-13-1-77-82.
6. Konstrukciya i tehnologiya mikroshem kosmicheskogo naznacheniya / V.K. Zol'nikov [i dr.] // Informacionno-sensornye sistemy v teplofizicheskih issledovaniyah: sbornik nauchnyh trudov. - Tambov, 2018. - S. 229-232.
7. Komarov, A.S. Upravlenie tehnicheskim urovnem vysokointegrirovannyh elektronnyh sistem (nauchno-tehnologicheskie problemy i aspekty razvitiya) : monografiya / A.S. Komarov, D.V. Krapuhin, E.I. Shul'gin. – M. : Tehnosfera, 2014. - 240 s.
8. Anashin, V.S. Osobennosti processa kontrolya stoykosti EKB kosmicheskih primeneniy k vozdeystviyu ioniziruyuschih izlucheniy kosmicheskogo prostranstva / V.S. Anashin, P.A. Chubunov, A.E. Kozyukov // Mikroelektronika-2015. Integral'nye shemy i mikroelektronnye moduli: proektirovanie, proizvodstvo i primenenie: sbornik dokladov Mezhdunarodnoy konferencii. - 2016. - S. 117-119.
9. Zol'nikov, V.K. Metodika proektirovaniya sovremennoy mikrokomponentnoy bazy s uchetom odinochnyh sobytiy radiacionnogo vozdeystviya / V.K. Zol'nikov // Voprosy atomnoy nauki i tehniki. Seriya: Fizika radiacionnogo vozdeystviya na radioelektronnuyu apparaturu. - 2012. - № 3. - S. 5-8.
10. Zol'nikov, K. V. Sovremennoe proektirovanie elektronnoy komponentnoy bazy / K. V. Zol'nikov, V.V. Lavlinskiy // Ekonomika. Innovacii. Upravlenie kachestvom. - 2015. - № 1 (10). - S. 40-41.
11. Zol'nikov, K.V. Proektirovanie special'nyh SBIS i upravlenie proektami ih sozdaniya / K.V. Zol'nikov, V.A. Smerek, T.P. Belyaeva // Intellektual'nye tehnologii buduschego. Estestvennyy i iskusstvennyy intellekt: sbornik materialov Vserossiyskoy molodezhnoy konferencii. - Voronezh: Nauchnaya kniga, 2011. - S. 218-220.
12. Chernikov, B.V. Metody resheniya zadachi o razmeschenii elementov BIS / B.V. Chernikov, A.V. Mozhzhuhina, E.A. Chernikova // Informatizaciya i svyaz'. - 2020. - № 6. - S. 13-16.
13. Radiacionno-stoykoe proektirovanie vysokoproizvoditel'nyh nanometrovyh KMOP SBIS "sistema-na-kristalle" / Yu.M. Gerasimov, N.G. Grigor'ev, A.V. Kobylyackiy [i dr.] // Infokommunikacionnye i radioelektronnye tehnologii. - 2019. - T. 2, № 1. - S. 33-51. - DOI: 10.15826/icrt.2019.02.1.04.
14. Compact models for radiation hardening by design of SiGe BiCMOS, Gaas and SOI CMOS microwave circuits / D.I. Sotskov, N.A. Usachev, V.V. Elesin [et al.] // SIBCON 2021 - International Siberian Conference on Control and Communications. - 2021. - S. 9438867. - DOI: 10.1109/SIBCON50419.2021.9438867.
15. Osobennosti ispytaniy i ocenki radiacionnoy stoykosti kompleksirovannyh izdeliy EKB / D.V. Pechenkina, D.V. Boychenko, A.V. Sogoyan [i dr.] // Nanoindustriya. - 2020. - T. 13, № S4 (99). - S. 295-297. - DOI: 10.22184/1993-8578.2020.13.4s.295.297.
16. Sogoyan, A.V. Ocenka sootvetstviya integral'nyh shem trebovaniyam po stoykosti k vozdeystviyu tyazhelyh zaryazhennyh chastic / A.V. Sogoyan, A.A. Smolin, A.I. Chumakov // Bezopasnost' informacionnyh tehnologiy. - 2020. - T. 27, № 1. - S. 68-82. - DOI: 10.26583/bit.2020.1.06.
17. Kozyukov, A.E. Dekorpusirovanie elektronnoy komponentnoy bazy s obratnoy storony dlya podgotovki obrazcov k ispytaniyam na stoykost' k vozdeystviyu tyazhelyh zaryazhennyh chastic / A.E. Kozyukov, A.O. Volkov // Vestnik NPO im. S.A. Lavochkina. - 2021. - № 3 (53). - S. 60-71. - DOI: 10.26162/LS.2021.53.3.008.
18. Analiz i obosnovanie trebovaniy po nadezhnosti k perspektivnym kosmicheskim apparatam / V.E. Patraev, S.P. Vovchenko, E.A. Shangina, R.A. Matyushev // Aviakosmicheskoe priborostroenie. - 2020. - № 7. - S. 3-11. - DOI: 10.25791/aviakosmos.07.2020.1165.
19. Schepanov, A. Razvitie rossiyskoy elektronnoy komponentnoy bazy: vzglyad eksperta / A. Schepanov // Elektronika: Nauka, tehnologiya, biznes. - 2019. - № 7 (188). - S. 74-77. - DOI: 10.22184/1992-4178.2019.188.7.74.77.
20. Zol'nikov, V.K. Razrabotka shemotehnicheskogo i konstruktivno-tehnologicheskogo bazisa EKB / V.K. Zol'nikov, A.A. Stoyanov // Modelirovanie sistem i processov. - 2011. - № 1-2. - S. 28-30.
